Single crystalline aluminum nanowires with ideal resistivity
Received 19 May 2010; received in revised form 15 July 2010; accepted 22 July 2010. published online 28 July 2010.
We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using the standard theory of scattering in metal wires, and the observed resistivity values are consistent with the infinite average grain size.
aResearch Center for Time-domain Nano-functional Devices, Korea University, 5-1, Anam-Dong, Sungbuk-Gu, Seoul 136-701, South Korea
bSKKU Advanced Institute of Nanotechnology and School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
cSchool of Electrical Engineering, Korea University, 5-1, Anam-Dong, Sungbuk-Gu, Seoul 136-701, South Korea
Correspondence to: D. Whang, SKKU Advanced Institute of Nanotechnology and School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, South Korea. Tel.: +82 2 32903241; fax: +82 2 9210544.
Correspondence to: S.W. Hwang, School of Electrical Engineering, Korea University, 5-1, Anam-Dong, Sungbuk-Gu, Seoul 136-701, South Korea. Tel.: +82 2 32903241; fax: +82 2 9210544.
ABSTRACT