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Volume 62, Issue 9, Pages 686-689 (May 2010)


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Low temperature coefficient of resistivity induced by magnetic transition and lattice contraction in Mn3NiN compound

Ying Suna, Cong WangaCorresponding Author Informationemail address, Lihua Chua, Yongchun Wena, Man Niea, Fusheng Liub

Received 27 December 2009; received in revised form 12 January 2010; accepted 13 January 2010. published online 18 January 2010.

We report the low temperature coefficient of resistivity (TCR) of antiperovskite Mn3NiN compound for the first time. Interestingly, the resistivity remained almost constant with temperature from 250K. The dρ/dT value and the TCR were determined to be about 7.17×10−8ΩcmK−1 and 12.3×10−5K−1, respectively. It was found that the low TCR behavior was related to the magnetic transition and large lattice contraction. The origin of low TCR behavior was further analyzed based on the Labbé–Jardin tight-binding approximation model.

a Center for Condensed Matter and Materials Physics, School of Physics, Beihang University, Beijing 100083, China

b College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

Corresponding Author InformationCorresponding author.

PII: S1359-6462(10)00028-X

doi:10.1016/j.scriptamat.2010.01.027


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