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Volume 59, Issue 8, Pages 889-892 (October 2008)


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Effect of blocking layer by chemically induced surface barrier formation on xerographic properties

Young Ik Seoac, Dae-Gun Kima, Young Do Kima, Bum Jin Leeb, Kyu Hwan LeecCorresponding Author Informationemail address

Received 6 May 2008; accepted 25 June 2008.

In organic photoconductors, an anodic oxide layer acts as a barrier that prevents charge leakage to the substrate. A great challenge is forming a barrier that will enhance the xerographic properties of organic photoconductors. Here we report on a method for forming a surface barrier that simply involves immersion in extremely dilute alkaline solution and flattening in boiling water. The barrier demonstrates greatly enhanced wettability and xerographic properties of dark decay, sensitivity and residual voltage of the organic photoconductor.

a Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

b Baeksan OPC, Chungcheongbuk-do 365-843, Republic of Korea

c Computational Science Center, Korea Institute of Science and Technology, Seoul 136-650, Republic of Korea

Corresponding Author InformationCorresponding author. Tel.: +82 2 958 6759; fax: +82 2 958 5446.

PII: S1359-6462(08)00501-0

doi:10.1016/j.scriptamat.2008.06.049


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